Module code | ENE 410 |
Qualification | Undergraduate |
Faculty | Faculty of Engineering, Built Environment and Information Technology |
Module content | This module covers bipolar and Field Effect Transistor (FET) amplifier design (bias and frequency response of small-signal loaded single-stage, multistage, differential stage, and feedback amplifiers), amplifier figure of merit parameters, including total harmonic distortion, large-signal power amplifiers, and communication electronics (RF component modelling, two-port models for RF networks, matching networks, small-signal narrowband RF amplifiers). |
Module credits | 16.00 |
NQF Level | 08 |
Programmes | |
Prerequisites | ENE 310 GS |
Contact time | 1 practical per week, 1 tutorial per week, 3 lectures per week |
Language of tuition | Module is presented in English |
Department | Electrical, Electronic and Computer Engineering |
Period of presentation | Semester 1 |
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