|Fakulteit||Faculty of Engineering, Built Environment and Information Technology|
This module covers bipolar and Field Effect Transistor (FET) amplifier design (bias and frequency response of small-signal loaded single-stage, multistage, differential stage, and feedback amplifiers), amplifier figure of merit parameters, including total harmonic distortion, large-signal power amplifiers, and communication electronics (RF component modelling, two-port models for RF networks, matching networks, small-signal narrowband RF amplifiers).
|Prerequisites||ENE 310 GS|
|Contact time||1 practical per week, 1 tutorial per week, 3 lectures per week|
|Language of tuition||Module is presented in English|
|Department||Electrical, Electronic and Computer Engineering|
|Period of presentation||Semester 1|
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