Wendler, E; Bilani, O; Gartner, K, et al.
Radiation damage in ZnO ion implanted at 15 K
Nucl. Instrum.Meth. B 267, 2708-2711 (2009); DOI: 10.1016/j.nimb.2009.05.031
Schifano, R; Monakhov, EV; Svensson, BG, et al.
Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy
Physica B404, 4344-4348 (2009); DOI: 10.1016/j.physb.2009.09.030
Auret, FD; Coelho, SMM; Myburg, G, et al.
Electronic and annealing properties of the E-0.31 defect introduced during Ar plasma etching of germanium
Physica B404, 4376-4378 (2009); DOI: 10.1016/j.physb.2009.09.028
Nyamhere, C; Das, AGM; Auret, FD, et al.
Characterization of defects introduced in Sb doped Ge by 3 keVAr sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)
Physica B404, 4379-4381 (2009); DOI: 10.1016/j.physb.2009.09.037
Hayes, M; Schroeter, A; Wendler, E, et al.
Damage formation in Ge during Ar+ and He+ implantation at 15 K
Physica B404, 4382-4385 (2009); DOI: 10.1016/j.physb.2009.09.021
Coelho, SMM; Auret, FD; Myburg, G, et al.
Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium
Physica B404, 4389-4392 (2009); DOI: 10.1016/j.physb.2009.09.026
Mtangi, W; Auret, FD; Nyamhere, C, et al.
The dependence of barrier height on temperature for PdSchottky contacts on ZnO
Physica B404, 4402-4405 (2009); DOI: 10.1016/j.physb.2009.09.022
van Rensburg, PJJ; Auret, FD; Matias, VS, et al.
Electrical characterization of rare-earth implanted GaN
Physica B404, 4411-4414 (2009); DOI: 10.1016/j.physb.2009.09.018
Diale, M; Auret, FD
Effects of chemical treatment on barrier height and ideality factors of Au/GaNSchottky diodes
Physica B404, 4415-4418 (2009); DOI: 10.1016/j.physb.2009.09.039
Chawanda, A; Nyamhere, C; Auret, FD, et al.
Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process
Physica B404, 4482-4484 (2009); DOI: 10.1016/j.physb.2009.09.043
Nel, JM; Chawanda, A; Auret, FD, et al.
Microstructural and surface characterization of thin gold films on n-Ge (111)
Physica B404, 4493-4495 (2009); DOI: 10.1016/j.physb.2009.09.035
Roro, KT; van Rensburg, PJJ; Auret, FD, et al.
Effect of alpha-particle irradiation on the electrical properties of n-type Ge
Physica B404, 4496-4498 (2009); DOI: 10.1016/j.physb.2009.09.033
Schifano, R; Monakhov, EV; Vines, L, et al.
Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements
J. Appl. Phys.106, 043706 (2009); DOI: 10.1063/1.3168488
Das, AGM; Nyamhere, C; Auret, FD, et al.
A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation
Surf. Coat. Tech.203, 2628-2631 (2009); DOI: 10.1016/j.surfcoat.2009.02.082
Mtangi, W; Auret, FD; Nyamhere, C, et al.
Analysis of temperature dependent I-V measurements on Pd/ZnOSchottky barrier diodes and the determination of the Richardson constant
Physica B404, 1092-1096 (2009); DOI: 10.1016/j.physb.2008.11.022
Auret, FD; Coelho, SMM; van Rensburg, PJJ, et al.
Electrical characterization of defects introduced during metallization processes in n-type germanium
Materials Science In Semiconductor Processing11, 348-353 (2008); DOI: 10.1016/j.mssp.2008.09.001
von Wenckstern, H; Biehne, G; Lorenz, M, et al.
Dependence of Trap Concentrations in ZnO Thin Films on Annealing Conditions
Journal Of The Korean Physical Society53, 2861-2863 (2008)
Szafert, S; Paul, F; Meyer, WE, et al.
Synthesis and reactivity of new heterodinuclear iron/rhenium C-x complexes of the formula (eta(5)-C5Me5)Re(NO)(PPh3)(C C)(n)(eta(2)-dppe)Fe(eta(5)-C5Me5) (n=3, 4): Redox properties and a dicobalthexacarbonyl adduct
ComptesRendusChimie11, 693-701 (2008); DOI: 10.1016/j.crci.2007.10.009
Auret, FD; Coelho, SMM; Hayes, M, et al.
Electrical characterization of defects introduced in Ge during electron beam deposition of different metals
Physica Status Solidi A-Applications And Materials Science205, 159-161 (2008); DOI: 10.1002/pssa.200776814
Auret, FD; Coelho, S; Meyer, WE, et al.
Electrical characterization of defects introduced during sputter deposition of schottky contacts on n-type ge
J. Electron.Mater.36, 1604-1607 (2007); DOI: 10.1007/s11664-007-0245-y
Nyamhere, C; Chawanda, A; Das, AGM, et al.
Thermal stability of Co, Ni, Pt or RuSchottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition
Physica B 401, 226-229 (2007); DOI: 10.1016/j.physb.2007.08.152
Auret, FD; Meyer, WE; van Rensburg, PJJ, et al.
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band
Physica B 401, 378-381 (2007); DOI: 10.1016/j.physb.2007.08.192
Nyamhere, C; Auret, FD; Das, AGM, et al.
A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS)
Physica B 401, 499-502 (2007); DOI: 10.1016/j.physb.2007.09.008
Kassier, GH; Hayes, M; Auret, FD, et al.
Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO
J. Appl. Phys. 102,014903 (2007); DOI: 10.1063/1.2751413
Hayes, M; Auret, FD; van Rensburg, PJJ, et al.
Electrical characterization of He+ irradiated n-ZnO
Phys. Status Solidi B244, 1544-1548 (2007); DOI: 10.1002/pssb.200675135
Auret, FD; van Rensburg, PJJ; Hayes, A, et al.
Electrical characterization of defects in heavy-ion implanted n-type Ge
Nucl. Instrum.Meth. B 257, 169-171 (2007); DOI: 10.1016/j.nimb.2007.01.107
Hayes, M; Auret, FD; van Rensburg, PJJ, et al.
Electrical characterization of H+ ion irradiated n-ZnO
Nucl. Instrum.Meth. B257, 311-314 (2007); DOI: 10.1016/j.nimb.2007.01.033
Auret, FD; van Rensburg, PJJ; Hayes, M, et al.
Electrical characterization of defects introduced in n-type Ge during indium implantation
Appl. Phys. Lett.89, 152123 (2006); DOI: 10.1063/1.2360922
Gatzert, C; Blakers, AW; Deenapanray, PNK, et al.
Investigation of reactive ion etching of dielectrics and Si in CHF3/O-2 or CHF3/Ar for photovoltaic applications
J. Vac. Sci. Tachnol. A 24, 1857-1865 (2006); DOI: 10.1116/1.2333571
Auret, FD; Meyer, WE; Coelho, S, et al.
Electrical characterization of defects introduced during electron beam deposition ofSchottky contacts on n-type Ge
Mat. Sci. Semicon. Proc. 9, 576-579 (2006); DOI: 10.1016/j.mssp.2006.08.008
Auret, FD; Meyer, WE; Coelho, S, et al.
Electrical characterization of defects introduced during electron beam deposition of PdSchottky contacts on n-type Ge
Appl. Phys. Lett. 88, 242110 (2006); DOI: 10.1063/1.2213203
Auret, FD; Peaker, AR; Markevich, VP, et al.
High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon
Physica B376, 73-76 (2006); DOI: 10.1016/j.physb.2005.12.020
Nyamhere, C; Deenapanray, PNK; Auret, FD, et al.
Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
Physica B376,161-164 (2006); DOI: 10.1016/j.physb.2005.12.043
Auret, FD; Nel, JM; Hayes, M, et al.
Electrical characterization of growth-induced defects in bulk-grown ZnO
SuperlatticeMicrost.39, 17-23 (2006); DOI: 10.1016/j.spmi.2005.08.021
Copyright © University of Pretoria 2024. All rights reserved.
Virtual Campus
Download the UP Mobile App