University of Pretoria - 1999 Publications in Physics

Publications - 1999

Publications & Technical Reports
  1. F. D. Auret, S. A. Goodman, F. K. Koschnik, J.-M. Spaeth, B. Beaumont and P. Gibart:
    "Proton bombardment induced electron traps in epitaxially grown n-GaN."
    Appl. Phys. Lett. 74 (1999) 407-409.

  2. F. D. Auret, S. A. Goodman, F. K. Koschnik, J.-M. Spaeth, B. Beaumont and P. Gibart:
    "Sputter deposition induced electron traps in epitaxially grown n-GaN."
    Appl. Phys. Lett. 74 (1999) 474-477

  3. F. D. Auret, S. A. Goodman, M. J. Legodi, and W. E. Meyer:
    "Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation."
    Nuclear Instr. and Meth. B 148 (1999) 474-477.

  4. F. D. Auret, S. A. Goodman, W. E. Meyer, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart:
    "Metallisation induced electron traps in epitaxially grown n-type GaN."
    Material Sci. & Engineering B 71 (1999), 77-81.

  5. F. D. Auret, S. A. Goodman, G. Myburg, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart:
    "Defect introduction in epitaxially grown GaN during electron beam deposition of Ru Schottky contacts."
    Physica B&C B (1999) 84-87.

  6. F. D. Auret, W. E. Meyer, S. A. Goodman, , F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart:
    "Metastable-like behaviour of a sputter deposition induced electron trap in n-GaN."
    Physica B&C B (1999) 273-274.

  7. R.K. Bhaduri, R.K. Whelan, M. Brack, H.G. Miller, M.V.N.Murthy:
    ". Weyl series and the trace formula: A prescription for adding them."
    Physical Review A 59(2)(1999) R911-R914.

  8. R.F. Bishop, N.J. Davidson, R.M. Quick and M.M. van der Walt:
    "Variational results for the Rabi Hamiltonian."
    Physics Letters A 254 (1999) 215-224.

  9. D.J. Brink and M.E. Lee:
    "Confined blue irredescence by a diffracting microstructure: An optical investigation of the Cynandra opis butterfly."
    Applied Optics 35 (1999) 25.

  10. P. N. K. Deenapanray, F. D. Auret and G. Myburg:
    "Electrical characterisation and annealing properties of electrically active defects introduced in Si during sputter etching in an Ar-Plasma."
    Nuclear Instr. and Meth B 148 (1999) 300-305.

  11. S. A. Goodman, F. D. Auret, M. Du Plessis and W. E. Meyer:
    "The influence of high energy *-particle irradiation on the spectral and defect properties of a Si photovoltaic detector."
    Semiconductor Science and Technology 14 (1999) 323-326.

  12. S. A. Goodman, F. D. Auret, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart:
    "Radiation induced defects in MOVPE grown n-GaN."
    Material Sci. & Engineering B 71 (1999) 100-103.

  13. S. A. Goodman, F. D. Auret, F. K. Koschnik, J.-M. Spaeth, B. Beaumont and P. Gibart:
    "Field enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation." Appl. Phys. Lett. 74 (1999) 809-811.

  14. S. A. Goodman, F. D. Auret, M. C. Ridgway, and G. Myburg:
    "Proton irradiation of n-GaAs."
    Nuclear Instr. and Meth. B 148 (1999) 446-449.

  15. S. A. Goodman, F. K. Koschnick, Ch. Weber, J.-M. Spaeth and F. D. Auret:
    "Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs."
    Solid State Comm. 110 (1999) 593-598.

  16. V.P. Gusynin, V.M. Loktev, R.M. Quick and S.G. Sharapov:
    "Phase fluctuations and non-Fermi liquid properties of 2D Fermi-system with attraction."
    International Journal of Modern Physics B 13 (1999) 3510-3512.

  17. V.P. Gusynin, V.M. Loktev and S.G. Sharapov:
    "Green's function of a 2D Fermi system undergoing a topological phase transition."
    JETP Letters 69(2) (1999) 141-147.

  18. V.P. Gusynin, V.M. Loktev and S.G. Sharapov:
    "Pseudogap phase formation in the crossover from Bose-Einstein condensation to BCS superconductivity."
    JETP Letters 88(4) (1999) 685-689.

  19. M. Hayes, S. A. Goodman and F. D. Auret:
    "Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation."
    Nucl. Instr. and Meth. B 148 (1999) 474-477.

  20. G. Hirchenberg, P. Baradlai, K. Varga, G. Myburg, J. Schunk, P. Tilky and P. Stoddart:
    "Accumulation of radioactive corrosion products on steel surfaces of VVER type reactors. I 110m Ag."
    Journal of Nuclear Materials 265 (1999) 273-284.

  21. H.W. Kunert, S. Juillaguet, J. Camassel, J.B. Malherbe, R.Q. Odendaal, D.J. Brink and L.C. Prinsloo:
    "Optical properties of as-grown, a-particle irradiated and N2+-Ion implanted GaN."
    Physica Status Solidi B 216 (1999) 619-623.

  22. M. J. Legodi, F. D. Auret, S. A. Goodman:
    "Dopant related metastable defects in particle irradiated n-GaAs."
    Physica B 273-274 (1999) 762-765.

  23. M. J. Legodi, F. D. Auret, S. A. Goodman and J. B. Malherbe :
    "Schottky barrier modification and electrical characterisation of low energy He-ion bombardment induced defects in n- and p-type GaAs."
    Nucl. Instr. and Meth B 148 (1999) 441-445.

  24. V.M. Loktev, R.M. Quick and S.G. Sharapov :
    "Superconducting condensate formation in quasi-2D systems with arbitrary carrier density."
    Physica B&C C314 (1999) 233-246.

  25. V.M. Loktev, R.M. Quick and S.G. Sharapov:
    "On a possible reason behind the anisotropy observed in the superconducting properties of underdoped cuprates."
    Fizika Nizkikh Temperatur 25 (1999) 381-383.

  26. D. Malaza, H.G. Miller, A.R. Plastino and F. Solms:
    "Approximate time dependent solutions of partial differential equations: The Max-Ent-Minimum Norm approach."
    Physica A 265 (1999) 224-234.

  27. J.B. Malherbe and R.Q. Odendaal:
    "Ion sputtering, surface topography, SPM and surface analysis of electronic materials."
    Applied Surface Science 144-145 (1999) 192-200.

  28. M. Mamor, F. D. Auret, S. A. Goodman, D.J.. Brink, M. Hayes, F. Meyer, A. Vantomme, G. Langouche, P. N. K. Deenapanray:
    "Deep level properties of Er implanted epitaxially grown SiGe."
    Nucl. Instr. and Meth. B 148 (1999) 523-527

  29. M. Mamor, F. D. Auret, S. A. Goodman and J. B. Malherbe:
    "Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys."
    Thin Solid Films 343/344 (1999) 416-419

  30. M. Mamor, F. D. Auret, M. Willander, S. A. Goodman, G. Myburg, and F. Meyer:
    "Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma."
    Semiconductor Science and Technology 14 (1999) 611-614.

  31. G. Myburg, J. Schunk, P. Tilky and P. Stoddart:
    ". Radioaktov korroziotermekek megkotodese a VVER-tipusu atomreaktorok acelfeluletein, I. Az110m Ag-kontaminacio."
    Magyar Kemiai Folyoirat 105(4) (1999) 128-137.


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